亚洲日韩久久|国偷自产一区二区三区蜜臀国|国产一区二区日韩|99热这里只亚洲无码,无码

氮化鎵光電子融合集成及應用Monolithic III-nitride multicomponent system and its applications嚴嘉彬南京郵電大學教授WANG Yongjin Professor of Nanjing University of Posts and Telecommunications

鈣鈦礦LED晶體結(jié)構(gòu)穩(wěn)定性的研究Research on Crystal Structure Stability of Perovskite Light Emitting Diodes謝躍民蘇州大學功能納米與軟物質(zhì)研究院副教授XIE YueminProfessor of Soochow University

硅基LED照明技術(shù)進展及應用王光緒南昌大學教授WANG GuangxuProfessor of Nanchang University

基于多邊形微腔的表面等離激元在LED中的發(fā)光增強效應Luminescence Enhancement Effect of Cavity Plasmonic based on Polygonal Microcavity in LED陳鵬南京大學教授CHEN PengProfessor of Nanjing University

6G可見光通信Visible Light Communication Toward 6G遲楠復旦大學電子科學技術(shù)學院院長、教授CHI NanDean of School of Electronic Science and Technology

氮化鎵及碳化硅紫外探測器技術(shù)與產(chǎn)業(yè)化應用陸海鎵敏光電董事長、南京大學教授LU HaiProfessor of Nanjing University

Is WBG a Game Changer for Power Electronics IndustryFred LEE美國弗吉尼亞理工大學的大學特聘教授、美國工程院院士、美國國家發(fā)明家院士、中國工程院外籍院士Fred LEEDistinguished Professor Emeritus at Virginia Tech, USA; Member of the National Academy of Engineering (USA), Member of National Academy of Inventors (USA), Foreign Member of Chinese Academy of Engineering

Blue LED causes cell death in human hepatoma by inducing DNA damage袁野哈爾濱醫(yī)科大學副教授YUAN YeAssociate Professor of Harbin Medical University

基于氮化鎵的CRM圖騰柱PFC整流器的無傳感器電流過零檢測技術(shù)王浩宇上?？萍即髮W信息學院長聘副教授、研究員WANG HaoyuAssociate Professor of ShanghaiTech University

用于高效能量轉(zhuǎn)換應用的GaN HEMT的深能級效應和可靠性Deep level effects and reliability of GaN HEMTs for high efficiency energy conversion applicationsEnrico Zanoni意大利帕多瓦大學信息工程系教授Enrico ZanoniProfessor of Dipartimento di Ingegneria dellInformazioneUniversit di Padova

AlGaN基低維量子結(jié)構(gòu)外延和電導率調(diào)控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures許福軍北京大學物理學院副教授Xu Fujun - Associate Professor, Peking University

基于HVPE-Ga2O3氮化的GaN襯底技術(shù)The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大學教授XIU Xiangqian-Professor of Nanjing university

Adding efficiency to electronics with III-Nitride technologySrabanti CHOWDHURY美國斯坦福大學電氣工程副教授Srabanti CHOWDHURYAssociate Professor of Electrical Engineering and Senior Fellow at the Precourt Institute for Energy, USA

C4鹽生植物的產(chǎn)量、光利用效率和營養(yǎng)品質(zhì)--馬齒莧在不同光照強度、光周期和日照積分下的室內(nèi)生長Yield, Light Use Efficiency and Nutritional Quality of C4 Halophyte Portulaca oleracea L. Grown Indoors under Different Light Intensities, Photoperiods and Daily Light Integrals何潔新加坡南洋理工大學教授HE JieProfessor of Nanyang Technological University, Singapore

照強度與白色LED色溫對丹參種苗生長的影響Effects of lighting intensity and color temperature of white LED on growth of Salvia miltiorrhiza transplants賀冬仙中國農(nóng)業(yè)大學水利與土木工程學院教授HE DongxianProfessor of College of Water Resources and Civil Engineering, China Agricultural University

第三代半導體材料在不同領(lǐng)域的應用非常廣泛，其中，LED可以說是其第一個較成熟的應用突破口，伴隨著元宇宙等新時代的展開，Micro-LED顯示應用又迎來了一波新的發(fā)展機遇，作為應用的支撐，技術(shù)的發(fā)展水平非常重要。張榮教授分享了其帶領(lǐng)的團隊在氮化物半導體基顯示技術(shù)方面的最新研究及成果。報告結(jié)合Micro-LED的優(yōu)勢與挑戰(zhàn)，從外延結(jié)構(gòu)設(shè)計、芯片制備、全彩化方案、系統(tǒng)集成、納米LED等方面詳細分享了團隊最新的多個研究發(fā)現(xiàn)和研究

半導體激光器的理論和實踐都取得巨大成果。近年來,GaAs基大功率半導體激光器憑其優(yōu)勢，在眾多領(lǐng)域得到廣泛應用。但是GaAs基大功率半導體激光器仍面臨著功率不足、發(fā)熱量大及光束質(zhì)量差的問題。光電性能差是限制其應用的關(guān)鍵問題，如何進一步提高激光器的光電性能是半導體激光器面臨的挑戰(zhàn)。朱振博士在報告中，詳細分享了GaAs半導體激光器關(guān)鍵技術(shù)及最新研究進展，報告指出基于GaAs襯底的6x x（635-690），8 x x（780-880），9 x x

以氮化鎵、氮化鋁為代表的Ⅲ族氮化物寬禁帶半導體是研制短波長光電子器件和高頻、高功率電子器件的核心材料體系。由于缺少高質(zhì)量、低成本的同質(zhì)GaN和AlN襯底，氮化物半導體主要通過異質(zhì)外延，特別是大失配異質(zhì)外延來制備。由此導致的高缺陷密度、殘余應力成為當前深紫外發(fā)光器件、功率電子器件等氮化物半導體器件發(fā)展的主要瓶頸，影響了材料和器件性能的提升。沈波教授在報告中，結(jié)合氮化物半導體面臨的大失配外延生長問題、詳細分

SiC 功率MOSFET器件的可靠性研究Development trends and challenges of SiC Power MOSFET device 張藝蒙西安電子科技大學微電子學院教授Yimeng Zhang Professor of School of Microelectronics, Xidian University

SiC MOS器件氧化后退火新途徑低溫再氧化退火技術(shù)A new approach of post-oxidation annealing for SiC MOS devices -- the low-temperature re-oxidation annealing technology王德君大連理工大學教授Wang DejunProfessor of Dalian University of Technology